Grant number: 109068 | Funding period: 2024 - 2026
Active
N Sefidmooye Azar, M Parry, X Qi, C Lee, WSL Lee, B Russell, W Luo, RW de Gille, D Nelson, S Balendhran, J Meng, H Tan, GO Bonin, DY Choi, PJ Schuck, EM Chan, BE Cohen, DN Neshev, KB Crozier
2026-12-01
Accessing the rich information carried by infrared light typically relies on bulky, complex optoelectronic systems. Lanthanide-bas..
Sivacarendran Balendhran, Seyed Saleh Mousavi Khaleghi, Daniel Fan, Kenneth B Crozier
2026-06-01
Flexible infrared photodetectors are key building blocks for next-generation sensing systems demanding mechanical compliance, ligh..
VA Vedaraj, D Fan, J Chen, SSM Khaleghi, L Philpott, Y Sun, S Wang, S Tang, R Delaney, A Corletto, KB Crozier, J Bullock
2026-01-01
The van der Waals materials have emerged as promising candidates for infrared (IR) photodetectors. Among these, black phosphorus (..
S Wang, N Higashitarumizu, HM Kim, TJ Wijaya, IKM Reaz Rahman, S Wang, ED Gaspera, J Bullock, A Javey
2025-12-24
Carbon nanotubes (CNTs) possess exceptional optoelectronic properties, including broadband absorption and high absorption coeffici..
H Liu, A Barlow, A Corletto, CR Hall, J Bullock, S Tang, S Balendhran, SSM Khaleghi, S Rubanov, TA Smith, Y Dan, K Crozier
2025-09-23
Black phosphorus (BP) is an important mid-infrared semiconductor, having a direct bandgap from monolayer (≈1.7 eV) to bulk (≈0.31 ..
N Higashitarumizu, S Wang, S Wang, H Kim, J Bullock, A Javey
2024-10-23
High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectron..